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Surface related degradation of InP-based HEMTs during thermal stress

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
38
Issue
9
Identifiers
DOI: 10.1016/0038-1101(95)00057-z
Keywords
  • Session 4 Manufacturing

Abstract

Abstract Degradation of unpassivated InP HEMTs related to the surface of InAlAs was studied. In ungated HEMTs, the drain current decreased after annealing at temperatures as low as 250°C. RBS measurements revealed that lattice disorder was induced on the surface on InAlAs during thermal treatment, which was considered to be due to either the introduction of vacancies or In segregation. Surface-related degradation was effectively suppressed by passivating devices with SiN layers.

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