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1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy

Authors
  • Jouve, A.
  • Balan, V.
  • Bresson, N.
  • Euvrard-Colnat, C.
  • Fournel, F.
  • Exbrayat, Y.
  • Mauguen, G.
  • Sater, M. Abdel
  • Beitia, C.
  • Arnaud, L.
  • Cheramy, S.
  • Lhostis, S.
  • Farcy, A.
  • Guillaumet, S.
  • Mermoz, S.
Publication Date
Oct 16, 2017
Source
HAL-INRIA
Keywords
Language
English
License
Unknown
External links

Abstract

Copper/oxide hybrid bonding process has been extensively studied these past years as a key enabler for 3D high density application with top and bottom tier interconnection pitch below 10μm. Since 2015 hybrid bonding process robustness has been confirmed on complete electrical test vehicles [1,2] as well as commercial products [3] integrating copper to copper interconnection pitchs close to 6μm. To our knowledge, no results have been shown today demonstrating sub-1.5μm pitch copper hybrid bonding feasibility.

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