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A silicon-on-insulator quantum wire

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
39
Issue
1
Identifiers
DOI: 10.1016/0038-1101(95)00094-a
Disciplines
  • Physics

Abstract

Abstract Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteristics.

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