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Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
439
Identifiers
DOI: 10.1016/s0168-9002(99)00929-8
Keywords
  • Doping Profile
  • Defect Distribution
  • Lifetime

Abstract

Abstract A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage ( C/V) and current/voltage ( I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

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