Abstract In the following, we report investigations of the dependencies of the structural, optical and electrical characteristics of InN thin films grown by MOCVD on the growth temperature. The layer thicknesses range from 70 to 400 nm. Their carrier concentrations range from 7×10 18 to 4×10 19 cm −3. Hall mobility values from 150 to 1300 cm 2/V/s were determined in these films. The variation of the growth temperature and V/III ratio brought about different growth modes and rates. Using TEM, in addition to measuring layer thickness, we also determined the growth mode along with the structural quality of the InN layers. The surface roughness was obtained from AFM measurements. The layer crystalline quality was also investigated by means of X-ray diffraction in the rocking mode. Photoluminescence measurements performed at room temperature and at 7 K gave emission at around 0.7 eV.