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Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1− x)O3films on Ir/(100)(ZrO2)1− x(Y2O3)x/(100)Si structures

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
388
Identifiers
DOI: 10.1016/s0040-6090(01)00829-x
Keywords
  • Epitaxy
  • Ferroelectric Properties
  • Lead Oxide
  • Sputtering

Abstract

Abstract PZT films were deposited on the epitaxial Ir/(100)(ZrO 2) 1− x (Y 2O 3) x /(100)Si structures by sputtering. On the epitaxial (100) and the (100)+(111) Ir films, the tetragonal (001) PZT films were heteroepitaxially grown with a cube-on-cube relationship. Also, on the epitaxial (111) Ir film, the tetragonal (111) epitaxial PZT film was grown with quadruple domain. The crystalline quality of the epitaxial (001) PZT film was much better than that of the epitaxial (111) PZT film. The leakage and P– E characteristics of the epitaxial (001) PZT film on the (100) Ir film was superior to the (001) PZT film on the (100)+(111) Ir film and to the (111) PZT film.

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