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Estimation of hot photoelectron density in polar semiconductors

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
39
Issue
8
Identifiers
DOI: 10.1016/0038-1098(81)90031-4

Abstract

Abstract The fraction of laser excitation energy transferred to the electron gas is calculated for polar semiconductors in case of both monoenergetic and transit electrons involved into heating up the gas. The expressions obtained are used for the estimation of photoelectron density in ZnSe single crystals at 4.2K. The result is in good agreement with the data on photoelectron effective temperature saturation.

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