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Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
46
Identifiers
DOI: 10.1016/s0921-5107(96)01987-3
Keywords
  • Charge Injection Techniques
  • Gate Oxides
  • Metal Oxide Semiconductor

Abstract

Abstract A large part of interface states in thermal oxides on n- and p-type 6H-SiC can be passivated by introducing hydrogen to the fabrication process. The oxide trap densities of passivated and unpassivated samples are investigated by charge injection experiments using Fowler Nordheim and photo-injection techniques.

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