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Sub-micrometer thick CuInSe2films for solar cells using sequential elemental evaporation

Authors
Journal
Solar Energy
0038-092X
Publisher
Elsevier
Publication Date
Volume
83
Issue
7
Identifiers
DOI: 10.1016/j.solener.2009.01.016
Keywords
  • Cuinse2
  • Vacuum Evaporation
  • Stoichiometry
  • Photoluminescence

Abstract

Abstract CuInSe 2 thin films were prepared using sequential vacuum evaporation of In, Se and Cu at moderately low substrate temperatures, avoiding any treatment using toxic H 2Se gas. The samples were annealed at 400 °C at a pressure of 10 −5 mbar to form CuInSe 2. Structural, optical, electrical, compositional and morphological characterizations were carried out on these films. We could obtain highly stoichiometric film, using this simple method, without opting for co-evaporation or high substrate temperature for deposition.

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