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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Authors
Journal
Nanoscale Research Letters
1931-7573
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Volume
6
Issue
1
Identifiers
DOI: 10.1186/1556-276x-6-609
Keywords
  • Nano Express
Disciplines
  • Physics

Abstract

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E2(high) at 490.2 cm-1 and A1(LO) at 591 cm-1. The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.

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