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Radiation-resistant solar cells for space use

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Publication Date
Volume
68
Issue
1
Identifiers
DOI: 10.1016/s0927-0248(00)00344-5
Keywords
  • Solar Cell
  • Radiation
  • Defects
  • Si
  • Gaas
  • Inp. Ingap/Gaas Tandem

Abstract

Abstract This paper reviews the present status of radiation-resistant solar cells made with Si, GaAs, InP and InGaP/GaAs for space use. At first, properties of radiation-induced defects in semiconductor materials and solar cells are described based on an anomalous degradation of Si space solar cells under high-energy, high-fluence electron and proton irradiations. Advantages of direct bandgap materials as radiation-resistant space cells are presented. Unique properties of InP as radiation-resistant cells have also been found. A world-record efficiency of 26.9% (AM0) has been obtained for an InGaP/GaAs tandem solar cell. Radiation-resistance of the InGaP/GaAs tandem cells is described.

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