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Temperature dependence of dark and illuminated current-voltage characteristics of grating-type min MIS silicon solar cells

Authors
Journal
Solar Cells
0379-6787
Publisher
Elsevier
Publication Date
Volume
20
Issue
2
Identifiers
DOI: 10.1016/0379-6787(87)90033-0

Abstract

Abstract Dark and illuminated current-voltage characteristics of granting-type AlSiO x pSi metal-insulator-semiconductor (MIS) solar cells were measured as a function of temperature. The dark I–V characteristics showed p-n junction-like behaviour. Analysis of the saturation current as a function of temperature clearly indicated that the cells are of the minority carrier type. The diode ideality factors were found to be very similar under dark and illuminated conditions.

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