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Photoluminescence and photoluminescence excitation study of electron-hole tunneling in In0.53Ga0.47As/InP coupled-single quantum wells

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
196
Identifiers
DOI: 10.1016/0039-6028(88)90715-7
Disciplines
  • Physics

Abstract

Abstract Electron and hole tunneling is observed by photoluminescence and photoluminescence excitation spectroscopies in In 0.53Ga 0.47As/InP samples incorporating two quantum wells of different widths separated by 20–100 Å wide barriers. For 20 Å wide barriers the two associated emission lines due to confined excition recombination thermalize with activation energies demonstrating directly combined electron and hole tunneling through the barriers. From such data and measured luminescence decay times lower bounds for the tunneling rates are inferred.

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