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Synthesis, photoluminescence and dielectric properties of O-deficient SnO2nanowires

Authors
Journal
Journal of Alloys and Compounds
0925-8388
Publisher
Elsevier
Publication Date
Volume
479
Identifiers
DOI: 10.1016/j.jallcom.2009.01.054
Keywords
  • Semiconductors
  • Nanostructured Materials
  • Gas–Solid Reactions
  • Dielectric Response

Abstract

Abstract High-quality rutile SnO 2 nanowires were fabricated by a vapor-phase transport and condensation method assisted by carbothermal reduction. The composition and structure were investigated in detail. It is found that many oxygen vacancies exist in the single-crystalline rutile SnO 2 nanowires and can further influence the photoluminescence (PL) and dielectric property of the nanowires. The PL spectrum only exhibits a wide yellow emission centered at 570 nm and usual near band edge emission is not observed, which is ascribed to a large amount of ionized oxygen vacancies. The dielectric measurements indicate that the dielectric response of the SnO 2 nanowires is significantly enhanced in the low-frequency range. It is thought both the rotation direction polarization (RDP) and the space charge polarization (SCP) process induced by O vacancies and nanosize effects are the main reasons for the enhancement of relative dielectric constant ( ɛ r) of these SnO 2 nanowires.

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