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Soft X-ray studies of a c(4 × 2)* β-SiC(100) surface

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
349
Issue
3
Identifiers
DOI: 10.1016/0039-6028(95)01047-5
Keywords
  • Low Energy Electron Diffraction
  • Semiconducting Surfaces
  • Silicon Carbide
  • Soft X-Ray Photoelectron Spectroscopy
  • Stepped Single Crystal Surfaces
  • Surface Electronic Phenomena

Abstract

Abstract We report soft X-ray results for a Si-terminated β-SiC(100) surface characterized by a c(4 × 2) plus a weak possibly (2 × 2) reconstruction in low-energy-electron diffraction. The existence of two surface Si 2p photoemission core levels is confirmed, shifted by −0.5 and −1.4 eV from the bulk-like level. We further show results which indicate that the component with the large −1.4 eV shift is correlated with the surface reconstruction. Surface-sensitive Si L 23 absorption spectra suggest the existence of a high density of unfilled s-like states about 1.3 eV above, as well as unfilled s-like states near, the bulk conduction band minimum. Reconstructed surfaces beyond this “c(4 × 2)*” surface are also noted.

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