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Photo-induced potential barrier in As-Se-Ge films

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
66
Issue
6
Identifiers
DOI: 10.1016/0038-1098(88)90212-8

Abstract

Abstract Photo-excited effects in AsSeGe and AsSeGeSn amorphous films have been studied under illumination of different light sources. AsSeGe system exhibited rectifying characteristics under illumination of the light with hν > E g, while AsSeGeSn film did not show such phenomena. The illumination of the IR light along with the light of hν > E g weakened the rectification behavior. The photovoltage and I-V characteristics results suggest the existence of “photo-induced” potential barrier in AsSeGe system, which is considered to concern the creation and destruction of neutral defect states D°.

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