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Role of dopants in the electronic structure of hydrogenated amorphous silicon

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
8
Issue
1
Identifiers
DOI: 10.1016/0921-5107(91)90015-n
Disciplines
  • Physics

Abstract

Abstract The experimental results of boron and phosphorus doping effects are reviewed for plasma CVD hydrogenated amorphous silicon (a-Si:H) films prepared under different conditions. The results analysed comprise (a) transport properties, (b) changes in the optical properties (optical absorption coefficient, refractive index and dielectric constant of the material) (c) role of hydrogen from infrared absorption hydrogen measurements, and (d) possible defect states from ESR measurements. These results are augmented with the coordinated X-ray and ultraviolet photoemission measurements, to derive the hydrogen/dopant-induced changes in the electronic structures of a-Si:H. Finally, based on these results some possible structural configurations for these dopants in a-Si:H under different conditions are envisaged.

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