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Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
600
Issue
15
Identifiers
DOI: 10.1016/j.susc.2006.05.055
Keywords
  • Silicon
  • Germanium
  • Three-Bilayer Steps
  • Triangle Islands
  • Dimers
  • Scanning Tunneling Microscopy (Stm)

Abstract

Abstract A hypothesis of perpendicular dimer row formation along three-bilayer (3 BL) step was suggested. The hypothesis, explains the stability of 3 BL steps on the vicinal Si(1 1 1) surface deflected in 〈 1 ¯ 1 ¯ 2 〉 direction as well as the limitation of Ge and Si island height by 3 BL at the initial nucleation stages on Si(1 1 1) surface. The detailed examinations of STM images of 3 BL steps were carried out. New peculiarities of atomic structure of 3 BL single step on Si(1 1 1) and 3 BL steps on Si(5 5 7) surfaces were revealed. The results of STM images examination verify the hypothesis of perpendicular dimer row formation along the boundary of the 3 BL step.

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