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The solubility of oxygen in silicon

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
9
Identifiers
DOI: 10.1016/0022-3697(59)90099-x

Abstract

Abstract The intensity of the fine structure of the 1100 cm −1 silicon-oxygen absorption at 4·2°K has been used to determine the temperature-dependence of the concentration of oxygen in solid solution. Above 1000°C the logarithm of this concentration is a linear function of the reciprocal of the absolute temperature, and the heat of the precipitation reaction is 22±2 kcal/mole.

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