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Optical properties of one-side modulation-doped quantum wells

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
196
Identifiers
DOI: 10.1016/0039-6028(88)90734-0
Disciplines
  • Physics

Abstract

Abstract The low temperature optical properties of one-side GaAs/Ga(Al) As quantum wells are studied by photoluminescence and excitation spectroscopy. The electronic concentration is controlled in a FET-like structure and quantitative information on the bandgap renormalization is obtained. The role of excited conduction levels, when populated, is emphasized.

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