Abstract An active pixel sensor (APS) based on the DEpleted P-channel junction Field Effect Transistor (DEPFET) concept will be described as a potential wide field imager for ESA's high resolution, high throughput mission: `X-ray Evolving Universe Spectroscopy’ (XEUS). It comprises a parallel multichannel readout, low noise at high speed readout, backside illumination and a fill factor of 100% over the whole field of view. The depleted thickness will be 500 microns. These design parameters match the scientific requirements of the mission. The fabrication techniques of the DEPFET arrays are related to the high resistivity process of the X-ray pn-CCDs. Potential extensions of the already realized DEPFET structures are a non-destructive repetitive readout of the signal charges. This concept will be presented. As an alternative solution, frame store pn-CCDs are considered having the same format and pixel sizes as the proposed DEPFET arrays. Their development is a low risk, straightforward continuation of the XMM devices. Potential extensions of the already realized DEPFET structures are a non-destructive repetitive readout of the signal charges. This concept will be presented.