Affordable Access

Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol–gel method

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
253
Issue
2
Identifiers
DOI: 10.1016/j.apsusc.2005.12.113
Keywords
  • Sol–Gel
  • Zno:Al
  • Photoconductive Uv Detector
  • Ohmic Contact
  • Photoresponsivity
Disciplines
  • Physics

Abstract

Abstract We report a study on the fabrication and characterization of ultraviolet photodetectors based on ZnO:Al films. Using sol–gel technique, highly c-axis oriented ZnO films with 5 mol% Al doping were deposited on Si(1 1 1) substrates. The photoconductive UV detectors based on ZnO:Al thin films, having a metal–semiconductor–metal (MSM) structure with interdigital (IDT) configuration, were fabricated by using Au as a contact metal. The characteristics of dark and photocurrent of the UV detector and the UV photoresponse of the detector were investigated. The linear current–voltage ( I– V) characteristics under both forward and reverse bias exhibit ohmic metal–semiconductor contacts. Under illumination using monochromatic light with a wavelength of 350 nm, photo-generated current was measured at 58.05 μA at a bias of 6 V. The detector exhibits an evident wide-range spectral responsivity and shows a trend similar to that in transmittance and photoluminescence spectrum.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments