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Thin film adhesion improvement under photon irradiation

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
35
Issue
12
Identifiers
DOI: 10.1016/0042-207x(85)90326-4
Disciplines
  • Physics

Abstract

Abstract This paper outlines several observations relating to the modification of the adhesion of thin Al and Au films to semiconductors and oxides by photon irradiation at energies up to 21 eV. Results provide strong evidence that secondary processes (i.e. charged carriers generated by the incident photons) play a major role in bonding rearrangements and adhesion improvement at metal-non-metal interfaces.

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