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Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
62
Issue
2
Identifiers
DOI: 10.1016/0038-1098(87)91118-5
Disciplines
  • Chemistry

Abstract

Abstract The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.

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