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A simple method to synthesize α-Si3N4, β-SiC and SiO2nanowires by carbothermal route

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
312
Issue
14
Identifiers
DOI: 10.1016/j.jcrysgro.2010.03.039
Keywords
  • A1. Nanostructures
  • A2. Growth From Vapor
  • B1. Nitrides
  • B1. Nanomaterials

Abstract

Abstract α-Si 3N 4 nanowires, β-SiC nanowires and SiO 2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si 3N 4 nanowires, β-SiC nanowires and SiO 2 amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si 3N 4 nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiO x layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.

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