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Vapour growth of crystals with a steady state source

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
26
Issue
1
Identifiers
DOI: 10.1016/0022-0248(74)90195-x

Abstract

Abstract A method for growing single crystals of compound materials with accurate composition is described. The special growth ampoule produces PbTe with room temperature carrier densities of 3 × 10 17 cm -3 as-grown. The suitability of this method for other compounds is discussed in terms of diffusion coefficients and vapour pressure of the constituents.

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