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MIS hot electron devices for enhancement of surface reactivity by hot electrons

Technical University of Denmark (DTU)
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  • A Metal-Insulator-Semiconductor (Mis) Based Device Is Developed For Investigation Of Hot Electron En
  • A Model Of The Device Is Presented Explaining The Key Concepts Of The Functionality And The Characte
  • The Mis Hot Electron Emitter Is Fabricated Using Cleanroom Technology And The Process Sequence Is De
  • An Ultra High Vacuum (Uhv) Setup Is Modified To Facilitate Experiments With Electron Emission From T
  • Simulations Show The Importance Of Keeping Tunnel Barrier Roughness To An Absolute Minimum
  • The Tunnel Oxide Is Characterized Using Iv And Cv Measurements To Extract Tun- Nel Barrier Thickness
  • Which Was Distributed Around The Expected Value Of 50 ºA
  • Cv Measurements Yield Thicknesses Between 44
  • 7 ºA And 58 ºA
  • The Iv And Cv Measurements Is Shown To Correlate And An O®Set Between The Two Types Of Measurements
  • Electron Emission Is Realized From The Devices To A Collector Plate
  • The Emission Below 5 V Varies Between Consecutive Measurements
  • But Is Stable Above 5 V
  • The Work Function Is Lowered Using Cs To 2 Ev And Emitted Electrons Are Observed From A Bias Voltage
  • The Maximum Emission Efficiency Of 8% Is Obtained At 3 V On The Cs Covered Mis Hot Electron Emitter
  • The Mean Free Path Of Au For 5 Ev Electron Extracted From Emission Experiments Is 52 ºA
  • Which Is In Excellent Agreement With Other Measurements
  • The Ti Wetting Layer Is Found To Be An Important Energy Loss Center For The Electrons Tunneling Thro
  • Electron Emission Is Observed Under Ambient Pressure Conditions And In Up To 2 Bars Of Ar
  • 2 Bar Ar Decrease The Emission Current By An Order Of Magnitude Compared To Emission In Vacuum
  • The Emission Current Is Observed To Decrease Exponentially With Pressure
  • The Energy Dispersion Of The Emitted Electrons Is Measured Using A Customized Hemispherical Analyzer
  • The Emitted Electrons Are Emitted In A Narrow Peak (Fwhm 0
  • 3-0
  • 5 Ev) Moving Up In Energy Proportional To The Bias Voltage
  • A Tail Of Scattered Electrons Extend From The Main Peak Towards The Work Function Edge Of The Emissi
  • The Mis Hot Electron Iii Iv Emitter Devices Are Heated Using A Direct Current Of 0
  • 3 A Through A 20 Nm Pt Gate Metal Layer And The Temperature Is Monitored Using The Calibrated Resist
  • The Mis Hot Electron Emitters Are Cleaned In-Situ In A Background Pressure Of 3 £ 10¡7 Mbar O2
  • Thermal Desorption Experiments With Labeled Co Are Carried Out With A Reproducibility Of 7%
  • The Detection Limit Of Labeled Co For The Mass Spectrometer Setup Is Estimated To 3 £ 109 S¡1 From T
  • The Theoretical Hot Electron Induced Desorption Rate Is Estimated To 2£104 S¡1


MIS hot electron devices for enhancement of surface reactivity by hot electrons - DTU Orbit (19/03/14) MIS hot electron devices for enhancement of surface reactivity by hot electrons Thomsen, L. B., Hansen, O. & Chorkendorff, I. May 2009 Kgs. Lyngby, Denmark: Technical University of Denmark (DTU). 174 p. Publication: Research › Ph.D. thesis – Annual report year: 2009

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