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Peculiar structure of X-ray standing wave lines of Si:As

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
199
Identifiers
DOI: 10.1016/s0168-583x(02)01415-5
Keywords
  • X-Ray Standing Wave
  • Impurity
  • Local Structure

Abstract

Abstract X-ray standing wave (XSW) lines were measured for As-implanted Si wafers (Si:As) in order to investigate the annealing effect on local structure around As atoms. The observed XSW lines were spiral like and their patterns of an annealed and as-implanted Si:As samples were quite similar, though the EXAFS data of both samples showed different local structures. This result suggested that there existed stable mosaic crystalline phase in a certain region of Si wafer, which formed during As-implantation. The structural difference between the annealed and as-implanted Si:As samples was clarified by the XSW line measurements with highly angular resolution, resulting that the surfaces of the as-implanted Si:As sample were amorphous like and it crystallized by the annealing.

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