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Dielectric function of disorder in high-fluence helium-implanted silicon

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Publication Date
DOI: 10.1016/j.nimb.2006.10.054
  • Physics


Abstract Dielectric function of disorder in single-crystalline silicon (c-Si) implanted by He with energy of 40 keV and fluences from 1 × 10 16 to 1 × 10 17 cm −2 were determined around the E 1 and E 2 critical points (CPs) by spectroscopic ellipsometry. The implanted material was modeled by an effective medium composition of c-Si and damaged Si. The dielectric function of damaged Si was calculated using the model dielectric function of Adachi to fit the E 1 and E 2 CP parameters of the MDF. The penetration depth of light in the photon energy range of 3–5 eV is less than 100 nm, which allows a simple layer structure of (surface oxide)/(surface amorphous layer)/(c-Si + damaged Si as a substrate). The oscillator energies and strengths decrease, while the broadening parameters increase with increasing fluence. Rutherford backscattering spectrometry was used for cross-checking of the surface disorder.

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