Affordable Access

Publisher Website

The collisional behaviour of atomic silicon in the electronic states Si(3p2(3PJ,1D2,1S0)) with SF6by time-resolved atomic resonance absorption spectroscopy

Authors
Journal
Journal of Photochemistry
0047-2670
Publisher
Elsevier
Publication Date
Volume
28
Issue
4
Identifiers
DOI: 10.1016/0047-2670(85)87039-8
Disciplines
  • Chemistry

Abstract

Abstract We present a kinetics study of the three states of atomic silicon arising from the overall ground state configuration, namely Si(3p 2( 3P J )), Si(3p 2( 1D 2)) (0.781 eV) and Si(3p 2( 1(S 0)) (1.909 eV) with the molecule SF 6. These atoms, generated by the repetitive pulsed irradiation of SiCl 4 in the presence of SF 6 and helium buffer gas, were monitored photoelectrically by time-resolved atomic resonance absorption spectroscopy at the following wavelengths: λ = 251.6 nm (Si(3 3P 1) ← Si(3 3P J )), λ = 288.16 nm (Si(4 1P 1) ← Si(3 1D 2) and λ = 390.53 nm (Si(4 1P 1) ← Si(3 1S 0)). Of the three states, Si(3 1D 2) showed marked effects due to cascading from Si(3 1S 0) on collision with SF 6. The following absolute rate constants k (cm 3 molecule −1 s −1) (300 K) are obtained: k(Si(3 3P J ) + SF 6) = (3.2 ± 0.5) × 10 −11, k(Si(3 1D 2) + SF 6) = (8.4 ± 0.6 × 10 −11 and k(Si(3 1S 0) + SF 6) = (2.0 ± 0.5) × 10 −10. These are compared with results for the removal of atomic silicon with other fluorinated compounds that have been investigated as collision partners, namely F 2 and CF 4. Subsequent production of SiF in various electronic states is considered as is the feasibility of constructing a laser operating on the transition SiF(a 4Σ −) → SiF(A 2Σ +) + hv (1.4 μm) and resulting from the reaction of Si(3 1D 2) and Si(3 1S 0) generated photochemically from SiCl 4 in the single-shot pulsed mode and in the presence of fluorine-containing molecules.

There are no comments yet on this publication. Be the first to share your thoughts.