Affordable Access

Publisher Website

An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
605
Issue
3
Identifiers
DOI: 10.1016/j.nima.2009.04.005
Keywords
  • Molecular Scattering Cross-Section
  • Linear Differential Scattering Coefficient
  • X-Ray Fluorescence Spectrometry

Abstract

Abstract The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature.

There are no comments yet on this publication. Be the first to share your thoughts.