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Experimental study of carrier transport in multi-layered structures

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
47
Identifiers
DOI: 10.1016/j.microrel.2007.01.051

Abstract

Abstract Gate stress measurements are applied to Flash cell array structures. The counter intuitive V t shift is associated to the charge redistribution in the ONO layer. This redistribution of charge follows Poole–Frenkel conduction mechanisms. In multi-level Flash, the total charge in the nitride layer need to be minimized, and well-controlled, in order to achieve good data retention of the device.

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