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Adsorption oft-butylphosphine (TBP) on GaP(001)-(2×4) and the surface structure studied by HREELS and STM

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
432
Issue
3
Identifiers
DOI: 10.1016/s0039-6028(99)00425-2
Keywords
  • Chemisorption
  • Electron Energy Loss Spectroscopy
  • Gallium Phosphide
  • Low Index Single Crystal Surfaces
  • Scanning Tunneling Microscopy
  • Semiconducting Surfaces
  • Surface Structure
  • T-Butylphosphine
  • Vibrations Of Adsorbed Molecules

Abstract

Abstract Adsorption of t-butylphosphine (TBP: (CH 3) 3CPH 2) on a GaP(001)-(2×4) surface has been studied by high resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy. The HREELS result suggests that most of TBP molecules are dissociated into (CH 3) 3CPH and H on the surface at room temperature. It is found that all the (CH 3) 3CPH molecules are located at an edge of Ga dimer protrusions in the (2×4) unit cell. This result supports our ‘one Ga dimer model’ and excludes the ‘two Ga dimer model’.

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