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Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
311
Issue
5
Identifiers
DOI: 10.1016/j.jcrysgro.2008.12.029
Keywords
  • A1. Doping
  • A3. Chemical Vapor Deposition Processes
  • A3. Hot Wall Epitaxy
  • B1. Silicon Carbide

Abstract

Abstract A systematic n-type doping study has been performed on 4H- and 6H-SiC epilayers grown at high growth rate using chloride-based CVD. The effect of temperature, pressure, growth rate, C/Si and Cl/Si ratios and dopant flow on the incorporation of the nitrogen and phosphorus donor atoms has been investigated. It is found that the effect of the C/Si ratio on the incorporation of nitrogen or phosphorus atoms is similar to what has been reported for the standard low growth rate process without addition of chlorine. The Cl/Si ratio seems to affect the nitrogen incorporation at growth rates higher than 65 μm/h. The doping concentration is stable against variations in growth rate, growth pressure and growth temperature for the nitrogen-doped layers.

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