Affordable Access

Publisher Website

Measurement of the onset of quasi-saturation in bipolar transistors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
17
Issue
11
Identifiers
DOI: 10.1016/0038-1101(74)90163-4
Disciplines
  • Musicology

Abstract

Abstract The onset of quasi-saturation in a bipolar transistor is accompanied by h FE - and f T -fall-off and by an increase in h.f. distortion (intermodulation and cross-modulation). We show that the boundary between normal and quasi-saturated operation is easily established experimentally by measuring the l.f. third harmonics of the collector current, as a function of bias voltage and current. Examples are given for ohmic, tepid and hot carrier current flow in the epitaxial collector region.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Circuit modeling of collector current spreading ef...

on Solid-State Electronics Jan 01, 1988

Switch-off transient analysis for heterojunction b...

on Solid-State Electronics Jan 01, 1993

A new model of the effect of mechanical stress on...

on Sensors and Actuators A Physic... Jan 01, 2002

Modelling of VHF and microwave power transistors o...

on Solid-State Electronics Jan 01, 1982
More articles like this..