Published in ACS applied materials & interfaces
The development of new resist materials is vital to fabrication techniques for next-generation microelectronics. Inorganic resists are promising candidates because they have higher etch resistance, are more impervious to pattern collapse, and are more absorbing of extreme ultraviolet (EUV) radiation than organic resists. However, there is limited u...
The practical application of Li-S batteries is hampered because of their poor cycling stability caused by electrolyte-dissolved lithium polysulfides. Dual functionalities such as strong chemical adsorption stability and high conductivity are highly desired for an ideal host material for the sulfur-based cathode. Herein, a uniform polypyrrole layer-...
Published in ACS nano
Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essen...
Published in Angewandte Chemie (International ed. in English)
Characterizing and controlling the interlayer orientations and stacking orders of two-dimensional (2D) bilayer crystals and van der Waals (vdW) heterostructures is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) crystals that result from different layer stackings provide an ...
Published in Glass and Ceramics
The results of work on the stabilization of the wall thickness of quartz tubes by means of external vapor-phase deposition during high-temperature hydrolysis of silicon tetrachloride are presented. The technological parameters of deposition and sintering of a porous layer are determined. Defect-free layers of glass of thickness greater than 0.2 mm ...
GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
