Published in Journal of Semiconductors
This paper presents a 26-Gb/s CMOS optical receiver that is fabricated in 65-nm technology. It consists of a triple-inductive transimpedance amplifier (TIA), direct current (DC) offset cancellation circuits, 3-stage gm-TIA variable-gain amplifiers (VGA), and a reference-less clock and data recovery (CDR) circuit with built-in equalization technique...
This study reviews second-generation voltage conveyor (VCII)-based read-out circuits for sensors and bioelectrical signal conditioning from existing literature. VCII is the dual circuit of a second-generation current conveyor (CCII), which provides the possibility of processing signals in the current domain while providing output signals in the vol...
Published in Frontiers in Mechanical Engineering
Over the past two decades, the advancement in microelectromechanical systems (MEMS) has been making headway in the development of miniaturized mechanical structures with integrated electronics. By adopting the existing layer in the complementary metal–oxide–semiconductor (CMOS) fabrication platform, the so-called “CMOS-MEMS” technology offers an in...
Technical details associated with a novel relative motion sensor system are elaborated in the paper. By utilizing the Doppler effect, the optical sensor system estimates the relative motion rates between the sensor and the moving object equipped with modulating light sources and relatively inexpensive electrical components. A transimpedance amplifi...
New circuit architectures and technologies for high-speed electronic and photonic integrated circuits are essential to realize optical interconnects with higher symbol rate. As a consequence of the increasing speeds, close integration and co-design of photonic and electronic chips have become a necessity to realize high-performance transceivers wit...
This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). Using a semiconductor-based HEMT as a gas-sensing device, it is possible to secure high sensitivity, reduced complexity, low power, and small size of the ROIC sensor system. Unlike existin...
This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photodiode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static disch...
Published in Micromachines
CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This p...
The work presents a time gain compensation amplifier as a part of ultrasound analog front-end circuit. The circuit compensates the attenuation which is experienced by the ultrasound echoes while traveling. The simulations have been done both for pre- and post-layout. The circuit is designed to interface 10 pF CMUT and to drive 5 pF capacitive load....
Published in Sensors (Basel, Switzerland)
To overcome light interference, including a large DC offset and ambient light variation, a robust photoplethysmogram (PPG) readout chip is fabricated using a 0.13-μm complementary metal-oxide-semiconductor (CMOS) process. Against the large DC offset, a saturation detection and current feedback circuit is proposed to compensate for an offset current...
