This paper discusses the effect of stress on the solubility and diffusivity of vacancies using the elasticity theory of point defects. To support the discussion, results are compared with DFT calculations to verify model accuracy. The particular case of vacancies in aluminum is discussed in detail (DFT-elasticity), while three other metallic fcc sy...
Published in Journal of Electronic Materials
This study investigated the effects of electric current and external stress on electromigration of intermetallic compounds (IMC) between solder and copper substrate. Different samples were tested under three different sets of conditions: (1) thermal aging only, (2) thermal aging with electric current ,where resistivity changes were measured using f...
Published in Trends in microbiology
Strain-to-strain variations in bacterial biofilm formation, metabolism, motility, virulence, evolvability, DNA repair and resistance (to phage, antibiotics, or environmental stresses) each contribute to bacterial diversity. Microbiologists should be aware that all of these traits are subject to constraints imposed by trade-offs, so adaptations impr...
The present paper compares the effects of AC and DC electrical stress on low-kappa SiOCH and high-kappa ZrO2 and Ta2O5 back-end dielectrics. A wide panel of stress conditions has been assessed, mixing DC, unipolar/bipolar and relaxation times. The DC-stress being the reference stress condition, no enhancement of the time-to-breakdown (T-BD) has bee...
Nonconsumptive predator effects are widespread and include plasticity as well as general stress responses. Caged predators are often used to estimate nonconsumptive effects, and numerous studies have focused on the larval stages of animals with complex life cycles. However, few of these studies test whether nonconsumptive predator effects, includin...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature...
The effects of uniaxial mechanical stress on the radio frequency performance of n- and p-metal-oxide-semiconductor field effect transistors MOSFETs are investigated up to 10 GHz. Under tensile stress, the gate transconductance gm increases in the n-MOSFETs while it decreases in the p-MOSFETs, whereas the results were vice versa for compressive stre...
