For biomass compaction, it is important to determine all aspects of the process that will affect the quality of pellets and briquettes. The low bulk density of biomass leads to many problems in transportation and storage, necessitating the use of a compaction process to ensure a solid density of at least 1000 kg·m&minus / 3 and bulk density of at l...
Published in Journal of Oceanology and Limnology
Harmful algal blooms in eutrophic waters pose a serious threat to freshwater ecosystems and human health. In-situ light availability control is one of the most commonly used technologies to suppress algae in lakes and reservoirs. To develop a better understanding of the effects of light on algal growth, specific density, colony size and sinking los...
Published in Metallurgist
The effect of adding aluminum on steel specific strength and corrosion resistance is studied. It is established by calculation that aluminum is the most effective element for reducing steel density. The effect of aluminum content on steel specimen corrosion resistance is studied by electrochemical methods. The possibility of improving steel corrosi...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical propert...
Cupric iodide is a p-type semiconductor and has a large band gap. Doping of Mn, Co, and Ni are found to make gamma-CuI ferromagnetic ground state, while Cr-doped and Fe-doped CuI systems are stabilized in antiferromagnetic configurations. The origins of the magnetic ordering are demonstrated successfully by the phenomenological band coupling model ...
A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. I...
Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and...
Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller tha...
