Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
16 channel200 GHz arrayed waveguide grating based on Si nanowire waveguides
A16 channel arrayed waveguide grating demultiplexer with200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of1.6 nm and crosstalk of31 dB. The device is fabricated by193 nm deep UV lithography in silicon-on-substra...
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
Band optimization of two-dimensional photonic crystal surface-emitting laser
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
Photon detection and emission of epitaxial Ge on Si with potential applications in microwave photonic filters
Microwave photonic filter requires high-speed Radio frequency(RF)-optical and optical-RF signal conversion. Light sources and photo-detectors(PDs) are indispensible for such conversions. Monolithic integration of functions of photon emission and detection is demonstrated using epitaxial Ge on Si. The fabricated waveguided PD shows a high bandwidth ...
Fabrication of biomimic GaAs subwavelength grating structures for broadband and angular-independent antireflection
We combine interferometric lithography and inductively coupled plasma etching to fabricate GaAs subwavelength grating (SWG) which mimics the moth eye structures. Through the modification of morphology parameters, including profile, height and packing fraction, tapered, high-aspect-ratio and closely-packed GaAs SWGs are obtained. The measurement of ...
Microring-resonator-based four-port optical router for photonic networks-on-chip
We design and fabricate a four-port optical router, which is composed of eight microring-resonator-based switching elements, four optical waveguides and six waveguide crossings. The extinction ratio is about 13 dB for the through port and larger than 30 dB for the drop port. The crosstalk of the measured optical links is less than -13 dB. The avera...
The p recombination layer in tunnel junctions for micromorph tandem solar cells
A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p(+) recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n-i-p tandem solar cells. The effects o...
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
