weng, junchi shen, xiulin yang, yixian zhang, xuejia fan, mengke gao, ge guo, zeming zhenfei, lv feng, xiujuan
Due to the lack of effective utilization, fly ash and red mud accumulate in large quantities and cause serious harm to the environment. In this experiment, a low-cost preparation of foamed ceramics was realized by applying the foaming agent addition method using fly ash and red mud. The results indicated that temperature and foaming agent content s...
Wang, Jinhu Jiang, Kai Yue, Xiuhui Zhang, Qianyong Wang, Cuishan Jing, Xueting Wang, Jing Tang, Wenjing Xia, Wei
Published in
Semiconductor Science and Technology
With the rapid development of semiconductor technology, silicon carbide has been widely used in various power electronic device. However, the material has an extremely high hardness ranking second only to diamond, which makes processing difficult. In this work, the two methods of laser cutting and dicing saw are utilized to test the cutting process...
payne, jared e. eddy, joseph stevenson, hunter nielson, gregory n. schultz, stephen
Advances in silicon carbide fabrication techniques enable the fabrication of high aspect ratio non-line-of-sight structures. The further development of non-line-of-sight fabrication tools and the use of the non-line-of-sight structures requires a set of measurement techniques. The goals of the measurement techniques are to (1) quickly detect the su...
Trung Kien, Kieu Do Ngoc Minh, Huynh
Published in
Materials Research Express
Silicon carbide is a compound that is usually synthesized by sintering silicon dioxide and carbon in an arc furnace at high temperatures. This method requires sophisticated technology and equipment, which restricts the widespread application of silicon carbide. As a result, researchers have turned to biomass materials for its synthesis, with rice h...
garofalo, angela muoio, annamaria sapienza, sergio ferri, matteo belsito, luca roncaglia, alberto la via, francesco
Silicon carbide (SiC) is an interesting semiconductor for MEMS devices. The high-value Young’s modulus of silicon carbide facilitates high frequencies and quality (Q) factors in resonant devices built with double-clamped beams. The aim of this work is to achieve the determination and modeling of the Q-Factor for samples of micromachined 3C-SiC film...
zhang, yunfei shen, hongmei zheng, wenzheng tong, wu xianjuan, pu zhou, diwen shen, senyuan lin, yingchao
Novel catalytic silicon carbide membrane filters (SCMFs) are synthesized with Co/Al–layered double hydroxide (Co/Al-LDH)-coated silicon carbide powder. After capsuled in a self-designed membrane shell, the SCMFs are utilized in activating persulphate for aniline degradation. Thermal analysis conducted via TG/DTG/DSC examination shows that the heati...
De, Aritra Guterl, Jerome Bergstrom, Zachary Abrams, Tyler Sinclair, Gregory Elder, John David Rudakov, Dmitry
Published in
Nuclear Fusion
The understanding and prediction of silicon carbide (SiC) material evolution exposed to SOL plasma conditions is of prime interest because SiC represents a promising main chamber wall plasma-facing material for next-step fusion devices (low hydrogenic diffusion, good mechanical and thermal properties under neutron irradiation). Gross and net Si ero...
ivzhenko, vyacheslav vovk, ruslan hevorkian, edvin kosenchuk, tamara chyshkala, volodymyr nerubatskyi, volodymyr cherniavskyi, vadym shamsutdinova, natalia
The kinetic regularities of the electrօspark sintering of SiC–TiC, SiC–VC composites at a pressure of 45 MPa and the temperatures of 1900 and 2000 °C have been established. At the first stage of the composite compaction process, the addition of TiC, VC impurities in the amount of 20 vol.% to silicon carbide with a dispersion of 2 μm increases the c...
Foong, Phey Yee Voon, Chun Hong Lim, Bee Ying Teh, Pei Leng Yeoh, Cheow Keat Parmin, Nor Azizah Gopinath, Subash C B Low, Foo Wah Abdul Rahim, Nor Azura Perumal, Veeradasan
...
Published in
Nanotechnology
Most previously reported susceptors for microwave welding are in powder form. In this study, a thin-film susceptor was employed due to its uniform heating rate and ease of handling. Silicon carbide nanowhisker (SiCNW) were incorporated into a poly(methyl methacrylate) (PMMA) matrix to create a nanocomposite thin film, which served as the susceptor....
yalçın, fatih köse, hüseyin savaşcıhabeş, asuman
This study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with advanced SiC semiconductors, resulting in reduced sw...