Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
Fabrication of biomimic GaAs subwavelength grating structures for broadband and angular-independent antireflection
We combine interferometric lithography and inductively coupled plasma etching to fabricate GaAs subwavelength grating (SWG) which mimics the moth eye structures. Through the modification of morphology parameters, including profile, height and packing fraction, tapered, high-aspect-ratio and closely-packed GaAs SWGs are obtained. The measurement of ...
Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light sou...
Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators
Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O fi...
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measur...
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
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A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By an...
Dispersion characteristics of nanometer-scaled silicon rib waveguides
We investigate the dispersion properties of nanometer-scaled silicon waveguides with channel and rib cross section around the optical fiber communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that the introduction of an extra degree of freedom in the r...
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
SiGe/Si heterogeneous nanostructures are prepared by electrochemical anodization of SiGe/Si multiple layers grown by ultra-high vacuum chemical vapor deposition. Nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-...
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreas...
