A unified description of physical phenomena through measurement science is one of the foundational pillars in a global society. The International System of Units (SI) is the most widely used system of units and since its redefinition in 2019, all units encompassed by it are based on fundamental physical constants. The units of the SI, such as the s...
Schuster, MarvinDe Luca, AnthonyWidmer, RemoMaeder, XavierLeinenbach, Christian
Additive manufacturing offers the opportunity to produce complex geometries from novel alloys with improved properties. Adapting conventional alloys to the process-specific properties can facilitate rapid implementation of these materials in industrial practice. Nevertheless, the processing of conventional alloys by laser powder bed fusion is chall...
Menon, HeeraMorgan, Nicholas PaulHetherington, CrispinAthle, RobinSteer, MatthewThayne, IainBorg, Mattias
InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si...
The sacroiliac joint (SIJ) is an important contributor to persistent and functionally limiting lower back pain. Despite extensive debate and research, there is no definitive treatment recommendation or high-level evidence to support a conservative care treatment approach, nor interventional or surgical management procedures for the alleviation of p...
Raya, Andres M.Friedl, MartinMarti-Sanchez, SaraDubrovskii, Vladimir G.Francaviglia, LucaAlen, BenitoMorgan, NicholasTutuncuoglu, GozdeRamasse, Quentin M.Fuster, David
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The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrat...
Stolichnov, IgorCavalieri, MatteoColla, EnricoSchenk, TonyMittmann, TerenceMikolajick, ThomasSchroeder, UweIonescu, Adrian M.
The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competitiveness depends on the power efficiency that requires reliable low-voltage operation. Here, we...
The high demand for an increase in performance and at the same time loweringthe emissions is forcing the automotive industry to increase the efficiency of thevehicles. This demand lead to a problem called knock, which often is the limitingfactor when increasing the efficiency of the engine. Knock occurs when theunburned gases inside the combustion ...