Trap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence
status: published
Tretja generacija solarnih celic
Sočne celice spadajo med fotovoltaične sisteme, ki so sposobni direktne pretvorbe sončne svetlobe v električno energijo. V grobem jih delimo v tri generacije. V tretjo generacijo uvrščamo tiste, katerih specifikacije so v fazi raziskovanja, njihova uporaba pa še ni komercializirana. Mednje sodijo perovskitne sončne celice, barvno občutljive sončne ...
Direct formation of ZnO nanorods by hydrothermal process: study on its optical properties and electron transport
Published in Materials Science-Poland
We report a new direct fabrication of the ZnO nanorods (NR) by hydrothermal method, in which the preparation of seed layer is eliminated. We show that the tuning of initial temperature rate during the hydrothermal process plays a key role in the structural modification of the ZnO NR. A highly oriented ZnO NR is successfully fabricated by using a lo...
Power Characteristics of GaN Microwave Transistors on Silicon Substrates
...Published in Technical Physics Letters
AbstractGaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
The Influence of the Skin Effect and Active Loss on the Intensity of EPR Lines in Semiconductor Materials
Published in Physics of the Solid State
AbstractThe influence of the skin effect and active loss in a semiconductor composite with a wide range of the values of the conductivity on the intensity of EPR absorption lines has been studied. An approach that enables one to obtain adequate agreement of the calculated and experimental results has been proposed. The absorption line intensity cor...
Nanostructured Semiconductor Materials for Light Manipulation Functions
Structuring of semiconductor materials is utilized in many optoelectronic devices, e.g, in order to make them more efficient, cost-effective, and/or to obtain specific wavelength-engineered responses. Semiconductor materials are widely used in optoelectronic devices due to their favorable optical and electric properties. Surface structuring of semi...
Targeted enrichment of 28Si thin films for quantum computing
Published in Journal of physics communications
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2% all the way to 99.99987% (0.83 × 10−6 mol mol−1 29Si). Isotopically enriched 28Si is regarded as an ideal host material for semiconducting quantum computing due to the lack of 29Si nuclear ...
Elaboration and Characterization of Materials from the LaMnO 3 –BiMnO 3 Binary System
The study of the La(1-x)BixMnO3 system was carried out using X-ray diffraction and electrical measurements. A continuous solid solution was evidenced for the LaMnO3 rich part of this system (x ≤ 0.6). According to the analyses of XRD results, a rhombohedral symmetry (3) was observed for x ≤ 0.4 and a cubic structure for x = 0.5. The structural stud...
Fused Pyrazine- and Carbazole-Containing Azaacenes: Synthesis and Properties.
...Published in ChemPlusChem
A new family of azaacenes has been designed and synthesized by incorporating the electron-withdrawing sp2 -hybridized nitrogen of pyrazine and electron-donating nitrogen of carbazole in a molecular skeleton. Two different conjugated lengths of 8-ring aza-nonacene and 10-ring aza-undecene have been achieved by an efficient condensation reaction. The...
Deep elastic strain engineering of bandgap through machine learning
Published in Proceedings of the National Academy of Sciences of the United States of America
Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic materials. Many possibilities remain to be investig...
