The electronic, mechanical and transport properties of the In substitution in GaAs are investigated by the TB-mBJ potential, BoltzTraP code and Charpin tensor matrix analysis using Wien2k code. The formation energies of the alloys Ga1−xInxAs (x = 0.0, 0.25, 0.50, 0.75 and 1.0) confirm that they are thermodynamically favorable. The directional symme...
Published in ACS applied materials & interfaces
The ability to manipulate the composition of semiconductor alloys on demand and at nanometer-scale resolutions is a powerful tool that could be exploited to tune key properties such as the electronic band gap, mobility, and refractive index. However, existing methods to modify the composition involve altering the stoichiometry by temporal or spatia...
This work describes electrical characteristics and the correlation to material properties of high electron mobility transistor structures with a C-doped GaN current blocking layer, grown either by an extrinsic or auto-doping process with different doping levels. Increasing degradation of crystalline quality in terms of threading dislocation density...
Published in Science advances
Structure and composition control the behavior of materials. Isostructural alloying is historically an extremely successful approach for tuning materials properties, but it is often limited by binodal and spinodal decomposition, which correspond to the thermodynamic solubility limit and the stability against composition fluctuations, respectively. ...
Published in Nano letters
Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells...
Published in Advanced materials (Deerfield Beach, Fla.)
Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabric...
Much progress has been made recently in synthesizing and studying the properties of semiconductors in nanostructured forms. However, there are few reports of II-VI ternary semiconductor alloy nanowires spanning their entire composition range. In particular, composition tuning in mismatched alloy systems allows for unique electronic band structure e...
Much progress has been made recently in synthesizing and studying the properties of semiconductors in nanostructured forms. However, there are few reports of II-VI ternary semiconductor alloy nanowires spanning their entire composition range. In particular, composition tuning in mismatched alloy systems allows for unique electronic band structure e...
Much progress has been made recently in synthesizing and studying the properties of semiconductors in nanostructured forms. However, there are few reports of II-VI ternary semiconductor alloy nanowires spanning their entire composition range. In particular, composition tuning in mismatched alloy systems allows for unique electronic band structure e...
