Effective Modulation of Optical and Photoelectrical Properties of SnS2 Hexagonal Nanoflakes via Zn Incorporation
xZnxS2 nanoflakes could offer huge potential for nanoelectronics and optoelectronics device applications.
Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities
m on a diffuse wafer surface when the vertical measuring range reaches 1.0 mm. The present findings indicate that the proposed technique is effective for 3-D microscale surface profilometry in in-situ semiconductor automated optical inspection (AOI).
High Pressure Crystal Structure and Electrical Properties of a Single Component Molecular Crystal [Ni(dddt)2] (dddt = 5,...
stacking distance within chains of [Ni(dddt)2] molecules. Using first-principles density functional theory (DFT) calculations, based on the experimentally-determined crystal structures, we confirm that the band gap decreases with increasing pressure. Thus, we have been able to rationalize the electrical behavior of [Ni(dddt)2] in the pressure-depen...
Research data supporting "Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles"
‘Figure 2a Device B.txt’: data for Figure 2a. Raw data for four measurements including time, applied voltage and measured current for applied weights of 0g, 50g, 100g and 0g rec (‘rec’ for recovered which was taken after 100g was applied). ‘Figure 2b reverse bias.txt’: data for Figure 2b for device A and device B for applied weights of 0g, 50g, 100...
Research data supporting "Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles"
‘Figure 2a Device B.txt’: data for Figure 2a. Raw data for four measurements including time, applied voltage and measured current for applied weights of 0g, 50g, 100g and 0g rec (‘rec’ for recovered which was taken after 100g was applied). ‘Figure 2b reverse bias.txt’: data for Figure 2b for device A and device B for applied weights of 0g, 50g, 100...
The Enhancement of H2 Evolution over Sr1−1.5xTbxWO4 Solid Solution under Ultraviolet Light Irradiation
1.5xTbxWO4 are narrower than the undoped sample. The Sr0.82Tb0.12WO4 sample, with the assistance of 1.5 wt % Ru-cocatalyst, exhibits the best performance for H2 evolution in 5 vol % aqueous triethanolamine (TEOA), which results in about 6.1 and 2.8 times efficiency improvement compared with the intrinsic SrWO4 in methanol and aqueous TEOA, respecti...
Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacu...
Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synt...
Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon
Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses the required crystallographic orientation for devi...
Antenna-Coupled Microbolometer Applications
cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.
Effective Mn-Doping in AgInS2/ZnS Core/Shell Nanocrystals for Dual Photoluminescent Peaks
We developed the effective Mn-doping procedure for AgInS2(AIS)/ZnS core/shell nanocrystals (NCs) to exhibit dual photoluminescence (PL) peaks. Although the AIS/ZnS core/shell NCs showed solely a single PL peak at ~530 nm, incorporation of a small amount of Mn as a dopant within the AIS/ZnS NCs resulted in the simultaneous emergence of dual PL peaks...
