Using a simple quantum master equation approach, we calculate the full counting statistics of a single-electron transistor strongly coupled to vibrations. The full counting statistics contains both the statistics of integrated particle and energy currents associated with the transferred electrons and phonons. A universal as well as an effective flu...
The ability of CuI to be doped p-type via the introduction of native defects has been investigated using first-principles pseudopotential calculations based on density functional theory. The Cu vacancy has a lower formation energy than any of the other native defects, which include I vacancy (V(I)), Cu interstitial (Cu(i)), I interstitial (I(i)), C...
The growth and characterization of high-quality ultrathin Fe(3)O(4) films on semiconductor substrates is a key step for spintronic devices. A stable, single-crystalline ultrathin Fe(3)O(4) film on GaAs(001) substrate is obtained by post-growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high abi...
