Okumura, Shigekazu Fujisawa, Kazuki Naruke, Tamami Nishi, Kenichi Onishi, Yutaka Takemasa, Keizo Sugawara, Mitsuru Sugiyama, Masakazu
Published in
Japanese Journal of Applied Physics
The effect of low-temperature InGaAs/GaAs cover layer growth of InAs quantum dots on their optical and structural properties was investigated. Photoluminescence intensity depended heavily on the growth temperature and thickness of the low-temperature cover layer and decreased as the number of dislocations formed directly above InAs quantum dots inc...
Mohammadi, H Roca, R C Kamiya, I
Published in
Nanotechnology
Strain control and photoluminescence (PL) enhancement of InAs surface quantum dots (SQDs), exposed to ambient conditions, have been achieved by introducing underlying buried quantum dots (BQDs). The PL wavelength has been tuned from 1270 to as long as 1780 nm, redshifted as the size of the SQDs is reduced. This is in strong contrast to standard QDs...
Tang, Diyong Xu, Desheng Luo, Zhipeng Ke, Jun Zhou, Yuan Li, Lizhong Sun, Jie
Published in
Nanomaterials (Basel, Switzerland)
Developing suitable photocatalysts for the oxygen evolution reaction (OER) is still a challenging issue for efficient water splitting due to the high requirements to create a significant impact on water splitting reaction kinetics. Herein, n-type Bi2WO6 with flower-like hierarchical structure and p-type Cu2O quantum dots (QDs) are coupled together ...
Xiao, Xinzhe Zhang, Yumin Zhou, Lei Li, Bin Gu, Lin
Published in
Nanomaterials (Basel, Switzerland)
In recent decades, photoluminescence (PL) material with excellent optical properties has been a hot topic. Graphene oxide (GO) is an excellent candidate for PL material because of its unique optical properties, compared to pure graphene. The existence of an internal band gap in GO can enrich its optical properties significantly. Therefore, GO has b...
Artchuea, Thanphisit Srikhaow, Assadawoot Sriprachuabwong, Chakrit Tuantranont, Adisorn Tang, I-Ming Pon-On, Weeraphat
Published in
Nanomaterials (Basel, Switzerland)
Sulfur composites consisting of electrochemical reactive catalysts/conductive materials are investigated for use in lithium-sulfur (Li-S) batteries (LSBs). In this paper, we report the synthesis, physicochemical and electrochemical properties of CuZnS quantum dots (CZSQDs) decorated with nickel-cobalt-sulfide ((NiCo)-S)) mixed with reduced graphene...
Gong, Du Zhang, Dawei Zhang, Xiaoying He, Xiaohong Ji, Yao Jia, Kun
Published in
Frontiers in Chemistry
Emulsion confinement self-assembly of block copolymer has witnessed increasing research interest in the recent decade, but the post-functionalization and application of the resultant polymeric micro/nano-particles are still in their infancy. In this work, a super-engineering polyarylene ether containing pendent nitrile and carboxyl (PAE-NC) has bee...
Korepanov, Oleg Aleksandrova, Olga Firsov, Dmitrii Kalazhokov, Zamir Kirilenko, Demid Kozodaev, Dmitriy Matveev, Vasilii Mazing, Dmitriy Moshnikov, Vyacheslav
Published in
Nanomaterials (Basel, Switzerland)
A synthesis protocol of polyvinylpyrrolidone-capped AgInS2 quantum dots in aqueous solution is reported. Nanoparticle morphology and chemical composition were studied by means of TEM, XRD, XPS, and FTIR. The obtained quantum dots were luminescent in the visible range. The photoluminescence intensity dependence on the polyvinylpyrrolidone amount was...
Bai, Changcun Wei, Tingting Zou, Lingyue Liu, Na Huang, Xiaoquan Tang, Meng
Published in
Journal of applied toxicology : JAT
Recently, the use of CdTe quantum dots in the field of biomedicine, such as biological imaging, biosensors, cell markers, and drug carriers, is increasing due to their special physical and chemical properties. However, their biosafety assessment lags far behind their rapid application. In this study, we observed that CdTe quantum dots with certain ...
Zhu, Yaxing Asahi, Shigeo Miyashita, Naoya Okada, Yoshitaka Kita, Takashi
Published in
Japanese Journal of Applied Physics
We elucidate a photocarrier collection mechanism in intermediate band solar cells (IBSCs) with InAs-quantum dots (QDs)-in-an-Al0.3Ga0.7As/GaAs-quantum well structures. When the Al0.3Ga0.7As barrier is excited, the device electrical output can be varied by additional infrared light for the electron intraband optical transition in QDs. The photocurre...
Lawrie, W.I.L. (author)
Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si) a...
