benevieri, alessandro cosso, simone formentini, andrea marchesoni, mario passalacqua, massimiliano vaccaro, luis
In contemporary power electronics, multilevel converters stand at the forefront of high-power, high-voltage applications, offering superior performance in terms of efficiency, reduced harmonics, and improved voltage waveform quality compared to traditional two-level converters. Their capability to synthesize waveforms with multiple voltage levels h...
blázquez, aitor pérez-molina, maría josé larruskain, dunixe marene iturregi, araitz eguia, pablo
Developing reliable protection systems is critical for the advancement of medium-voltage direct-current (MVDC) grids. This paper highlights the significance of fault detection in MVDC grids, especially in ensuring the reliability and efficiency of renewable energy systems. This paper provides a comparative analysis of fault detection algorithms, in...
zambrano-gutierrez, daniel f. cruz-duarte, jorge m. castañeda, herman avina-cervantes, juan gabriel
Metaheuristics have become popular tools for solving complex optimization problems; however, the overwhelming number of tools and the fact that many are based on metaphors rather than mathematical foundations make it difficult to choose and apply them to real engineering problems. This paper addresses this challenge by automatically designing optim...
spejo, lucas barroso knoll, lars minamisawa, renato amaral
This work investigates the performance of state-of-the-art non-commercial 6.5 kV Silicon Carbide (SiC) PiN and Junction Barrier Schottky (JBS) diodes in hybrid (Si IGBT with SiC diode) and full SiC (SiC MOSFET with SiC diode) switch topologies. The static and dynamic performance has been systematically evaluated at distinct temperatures, gate resis...
Naydenov, K Wang, Q Udrea, F Fujioka, H Tomita, H Nishiwaki, T Kumazawa, T Fujiwara, H
Published in
Semiconductor Science and Technology
This paper presents a comprehensive investigation on the role and manifestation of the FinFET effect in low voltage 4H-SiC MOSFETs as compared to their Si counterparts. For this purpose, a finite element model of a fabricated SiC FinFET with a fin width of 55 nm is constructed and calibrated to experimental data at a range of operating temperatures...
Kumar, S. Senthil Komble, S.P. Konduri, Praveen S.R. Kumar, Rakesh Surulivel Rajan, T. Khairnar, Yogesh Tarigonda, Hariprasad
Published in
E3S Web of Conferences
The increasing integration of renewable energy sources (RES) into the power grid necessitates advanced power electronics solutions to ensure efficient, reliable, and stable operation. This paper presents an overview of state-of-the-art power electronic technologies that facilitate the integration of renewable energy systems, such as photovoltaic (P...
botong, li rahaman, imteaz ellis, hunter d. houqiang, fu zhao, yuji cai, yong zhang, baoshun kai, fu
Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce ...
dai, xingjian xiaoting, ma dongxu, hu duan, jibing chen, haisheng
The literature written in Chinese mainly and in English with a small amount is reviewed to obtain the overall status of flywheel energy storage technologies in China. The theoretical exploration of flywheel energy storage (FES) started in the 1980s in China. The experimental FES system and its components, such as the flywheel, motor/generator, bear...
haghighi, rouzbeh bui, van-hai wang, mengqi wencong, su
Decarbonization is driving power systems toward more decentralized, self-governing models. While these technologies improve efficiency, planning, operations, and reduce the carbon footprint, they also introduce new challenges. In modern grids, particularly with the integration of power electronic devices and high penetration of Renewable Energy Sou...
Cascales, David Pimenta Barros, Patricia Martinez, Eugenie Ben Abbes, Riadh Salem, Bassem
Published in
Semiconductor Science and Technology
Plasma etching steps are critical for metal–oxide–semiconductor channel high electron mobility transistors gate fabrication as they can deteriorate electrical performances due to gallium nitride degradation. Adding SiCl4 to a low bias Cl2 plasma in presence of a SiN hard mask environment forms a silicon-based passivation layer that protects GaN fro...