Flavins are of great biological relevance, but little information is known about the isolated flavins. This dissertation deals with the electronic photodissociation spectroscopy of cryogenically cooled flavins. The optical spectra are recorded with a tandem mass spectrometer coupled to a cryogenic 22 - pole ion trap and an electrospray ionization s...
Autoreninformation: Professor Jürgen Bauch, Jahrgang 1956, studierte von 1977 bis 1982 Informationstechnik an der Technischen Universität Dresden und diplomierte mit einem Thema der Mikroelektroniktechnologie. Danach wechselte er an das Institut für Werkstoffwissenschaft (IfWW) der TU Dresden, promovierte und habilitierte sich dort 1986 bzw. 2001. ...
In dieser Arbeit wird eine neuartige hochsensitive Methode vorgestellt, die sich durch die Messung eines absorbierenden Mediums in dem externen Resonator eines zweimodigen Diodenlasers auszeichnet. Dabei wird die enorme Empfindlichkeit eines Zweimoden-Lasers auf Störungen des Modenwettbewerbs genutzt. Kleinste, spektral schmalbandige Verluste, die ...
In der vorliegenden Arbeit wird die großflächige Abscheidung von organischen Leuchtdioden (OLED) für Beleuchtungsanwendungen in einer neuartigen Beschichtungsanlage vorgestellt. Ausgehend von den speziellen Anforderungen an gleichförmige Schichtdickenverteilung und hohe Abscheideraten für die organischen Schichten, sind die Verfahren der thermische...
This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise b...
We present large-area emitters based on GaInAsN which show efficient THz emission for excitation wavelengths up to 1.35 µm. The substrate material consists of a 1000 nm Ga1-yInyAs1-xNx (y = 0.11 and x = 0.04) layer grown by molecularbeam epitaxy on semi-insulating GaAs. On top there is an additional GaAs/Al0.3Ga0.7As heterostructure with thicknesse...
Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H+ and D+ ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low-temperature Fourier transform infrared absorption measurements reveal the formation of N-H (N-D) complexes by the appearance of high-frequency abso...
Phonons are considered as a most important origin of scattering and dissipation for electronic coherence in nanostructures. The generation of coherent acoustic phonons with femtosecond laser pulses opens the possibility to control phonon dynamics in amplitude and phase. We demonstrate a new experimental technique based on two synchronized femtoseco...
The doping profile in different n-doped GaAs homoepitaxial structures grown by molecular beam epitaxy is investigated in the time domain by employing a laser based picosecond ultrasound technique in a contactless and noninvasive way. Experiments based on asynchronous optical sampling employ two femtosecond lasers, which allow us to detect changes i...
By employing the optically detected magnetic resonance (ODMR) technique, two different Ga(ind i) defects, namely Ga(ind i)-A and Ga(ind i)-B, are found and identified in the investigated Ga(Al)NAs epilayers grown on GaAs substrates by molecular-beam epitaxy (MBE). This finding shows that Ga interstitials are common intrinsic defects in various dilu...
